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| BDW94CF PNP Epitaxial Silicon Transistor July 2005 BDW94CF PNP Epitaxial Silicon Transistor Power Linear and Switching Application * Power Darlington TR * Complement to BDW93CF Respectively 1 TO-220F 2.Collector 3.Emitter 1.Base Absolute Maximum Ratings Symbol VCBO VCEO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Collector Current (DC) Collector Current (Pulse) * Base Current Ta = 25C unless otherwise noted Parameter Value -100 -100 -12 -15 -0.2 30 150 -65 ~ 150 Units V V A A A W C C Collector Dissipation (TC = 25C) Junction Temperature Storage Temperature TC = 25C unless otherwise noted Electrical Characteristics Symbol VCEO(sus) ICBO ICEO IEBO hFE Parameter Collector-Emitter Sustaining Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain * Conditions IC -100mA, IB = 0 VCB = -100V, IE = 0 VVCE = -100V, IB = 0 VEB = -5V, IC = 0 VCE = -3V, IC = -3A VCE = -3V, IC = -5A VCE = -3V, IC = -10A IC = -5A, IB = -20mA IC = -10A, IB = -100mA IC = -5A, IB = -20mA IC = -10A, IB = -100mA IF = -5A IF = -10A Min. -100 Typ. Max -100 -1 -2 Units V A mA mA 1000 750 100 20000 -2 -3 -2.5 -4 -1.3 -1.8 -2 -4 V V V V V V VCE(sat) VBE(sat) VF Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * Parallel Diode Forward Voltage * * Pulse Test: PW = 300s, Duty Cycle = 1.5% Pulsed (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com BDW94CF Rev. A BDW94CF PNP Epitaxial Silicon Transistor Package Marking and Ordering Information Device Marking BDW94CF Device BDW94CF Package TO-220F Reel Size - Tape Width - Quantity 50 Typical Performance Characteristics Figure 1. DC Current Gain 100k Figure 2. Collector-Emitter Saturation Voltage -10 VCE = -3V 10k VCE(sat) [V], SATURATION VOLTAGE IC= 250 IB hFE, DC CURRENT GAIN -1 1k 100 -0.1 -1 -10 -100 -0.1 -0.1 -1 -10 -100 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Base-Emitter On Voltage -20 Figure 4. Output Capacitance 1000 VCE= -3V f=1MHz IE=0 IC [A], COLLECTOR CURRENT -16 -12 Cob[pF], CAPACTIANCE 100 -8 -4 -0 -0.0 -0.8 -1.6 -2.4 -3.2 -4.0 10 -1 -10 -100 VBE [V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE BDW94CF Rev. A 2 www.fairchildsemi.com BDW94CF PNP Epitaxial Silicon Transistor Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 BDW94CF Rev. A 3 15.87 0.20 Dimensions in Millimeters www.fairchildsemi.com BDW94CF PNP Epitaxial Silicon Transistor BDW94CF PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 4 BDW94CF Rev. A www.fairchildsemi.com |
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